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APT50M75B2LL APT50M75LLL
POWER MOS 7
(R)
500V 57A 0.075
B2LL
R
MOSFET
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching (R) losses are addressed with Power MOS 7 by significantly lowering RDS(ON) (R) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Lower Gate Charge, Qg
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current
1
T-MAXTM
TO-264
LLL
* Increased Power Dissipation * Easier To Drive * Popular T-MAXTM or TO-264 Package
D G S
All Ratings: TC = 25C unless otherwise specified.
APT50M75B2LL_LLL UNIT Volts Amps
500 57 228 30 40 570 4.56 -55 to 150 300 57 50
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/C C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
2500
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) Drain-Source On-State Resistance
2
MIN
TYP
MAX
UNIT Volts
500 0.075 100 500 100 3 5
(VGS = 10V, ID = 28.5A)
Ohms A nA Volts
9-2004 050-7000 Rev D
Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
APT50M75B2LL_LLL
Test Conditions
VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 250V ID = 57A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 250V ID = 57A @ 25C RG = 0.6 6 INDUCTIVE SWITCHING @ 25C VDD = 333V, VGS = 15V ID = 57A, RG = 5 6 INDUCTIVE SWITCHING @ 125C VDD = 333V VGS = 15V ID = 57A, RG = 5
MIN
TYP
MAX
UNIT
5590 1180 85 125 33 65 8 19 21 3 755 725 1240 845
MIN TYP MAX UNIT Amps Volts ns C nC pF
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
ns
J
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol IS ISM VSD t rr Q rr
dv/ dt
Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage
1 2
57 228 1.3 655 13.5 8
MIN TYP MAX
(Body Diode) (VGS = 0V, IS = -57A)
Reverse Recovery Time (IS = -57A, dl S/dt = 100A/s) Reverse Recovery Charge (IS = -57A, dlS /dt = 100A/s) Peak Diode Recovery
dv/ 5 dt
V/ns
THERMAL CHARACTERISTICS
Symbol RJC RJA Characteristic Junction to Case Junction to Ambient UNIT C/W
0.22 40
1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471
4 Starting Tj = +25C, L = 1.54mH, RG = 25, Peak IL = 57A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -ID57A di/dt 700A/s VR VDSS TJ 150C 6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.25
, THERMAL IMPEDANCE (C/W)
0.2
0.9
0.7 0.15 0.5 0.1 0.3 0.05 0.1 0.05 0 10-5 10-4 Note:
PDM
9-2004
t1 t2
050-7000 Rev D
JC
Peak TJ = PDM x ZJC + TC
Duty Factor D = t1/t2
Z
SINGLE PULSE 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 1.0
Typical Performance Curves
ID, DRAIN CURRENT (AMPERES)
Junction temp. (C) RC MODEL
120 100 80 60 40
APT50M75B2LL_LLL
15 &10V 8V 7.5V
0.0144
0.00575F
7V
Power (watts)
0.0763
0.0186F
6.5V
0.130 Case temperature. (C)
0.278F
6V 20 5.5V 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 0
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
160 140 120 100 80 60 40 20 0 TJ = +125C TJ = +25C TJ = -55C
VDS> ID (ON) x RDS(ON) MAX. 250 SEC. PULSE TEST @ <0.5 % DUTY CYCLE
1.2
V
GS
NORMALIZED TO = 10V @ I = 28.5A
D
ID, DRAIN CURRENT (AMPERES)
1.15 1.10 1.05 1.00 0.95 0.90
VGS=10V VGS=20V
012 34567 8 9 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS
0
60
BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED)
1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50
20 40 60 80 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT
ID, DRAIN CURRENT (AMPERES)
50 40 30 20 10 0 25
50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED)
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50
2.5
I
D
= 28.5A = 10V
V
GS
2.0
1.5
1.0
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
0.5
0.0 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, RDS(ON) vs. TEMPERATURE
0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
-25
050-7000 Rev D
9-2004
228
ID, DRAIN CURRENT (AMPERES)
20,000
OPERATION HERE LIMITED BY RDS (ON)
APT50M75B2LL_LLL
Ciss
10,000
100
C, CAPACITANCE (pF)
100S 10 1mS TC =+25C TJ =+150C SINGLE PULSE 10mS
1,000
Coss
100
Crss
1
1 10 100 500 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA
I
D
0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
IDR, REVERSE DRAIN CURRENT (AMPERES)
10
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
16
= 57A
VDS=100V VDS=250V
200 100
12 VDS=400V 8
TJ =+150C
TJ =+25C
10
4
40 80 120 160 200 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE 100 90 80 td(off)
V
DD G
0
0
1 0.3 0.6 0.9 1.2 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 120 110 100 90 80
V
DD G
= 333V
R
= 5
T = 125C
J
L = 100H
td(on) and td(off) (ns)
70 60 50 40 30 20 10
= 333V
tf
tr and tf (ns)
R
= 5
T = 125C
J
70 60 50 40 30 20 10 tr
L = 100H
td(on)
1 10
50 60 70 80 90 ID (A) FIGURE 14, DELAY TIMES vs CURRENT
V
DD G
20
30
40
50 60 70 80 90 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT 3500 3000
SWITCHING ENERGY (J)
V I
DD
10
20
30
40
2500
= 333V
= 333V
R
= 5
D J
= 57A
SWITCHING ENERGY (J)
2000
T = 125C
J
T = 125C L = 100H EON includes diode reverse recovery
L = 100H EON includes diode reverse recovery
Eoff
Eon
2500 2000 1500 1000 500
1500
Eon
1000
9-2004
500
Eoff
050-7000 Rev D
50 60 70 80 90 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT
0 10
20
30
40
10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
0
0
5
APT50M75B2LL_LLL
90 %
Gate Voltage 10 % t d(on) T J = 125 C Drain Current 90% tr 5% 10% Switching Energy 5% Drain Voltage
10% 0 Drain Current t d(off) tf 90% Drain Voltage Gate Voltage TJ = 125 C
Switching Energy
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT60DF60
V DD
ID
V DS
G D.U.T.
Figure 20, Inductive Switching Test Circuit
T-MAXTM (B2) Package Outline
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
TO-264 (L) Package Outline
4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 19.51 (.768) 20.50 (.807) 3.10 (.122) 3.48 (.137) 5.79 (.228) 6.20 (.244)
Drain
20.80 (.819) 21.46 (.845)
Drain
25.48 (1.003) 26.49 (1.043)
4.50 (.177) Max. 0.40 (.016) 0.79 (.031)
2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 2.29 (.090) 2.69 (.106) 19.81 (.780) 21.39 (.842)
2.29 (.090) 2.69 (.106)
1.01 (.040) 1.40 (.055)
Source
0.48 (.019) 0.84 (.033) 2.59 (.102) 3.00 (.118) 0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125) 5.45 (.215) BSC 2-Plcs.
2.21 (.087) 2.59 (.102)
5.45 (.215) BSC 2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole. Dimensions in Millimeters and (Inches)
Dimensions in Millimeters and (Inches)
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7000 Rev D
9-2004
19.81 (.780) 20.32 (.800)
Gate Drain Source
Gate Drain

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